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Vishay Siliconix SI4816BDY-T1-E3

MOSFET 2N-CH 30V 5.8A 8-SOIC

Manufacturer:
Vishay Siliconix
Manufacturer Part:
SI4816BDY-T1-E3
Datasheet:
Vishay Siliconix SI4816BDY-T1-E3 Datasheet(PDF)

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Attribute Value
Mfr Vishay Siliconix
Series LITTLE FOOT
Package Tape & Reel (TR);Cut Tape (CT);Custom-Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 8.2A
Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1W, 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4816