Images are for reference only

Toshiba Semiconductor and Storage SSM6G18NU,LF

MOSFET P-CH 20V 2A 6UDFN

Out Sales

The inventory of this product may fluctuate too much; we need to confirm with our sales team.

Request a quote

Attribute	Value
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR);Cut Tape (CT);Custom-Reel
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-µDFN (2x2)
Package / Case	6-WDFN Exposed Pad
Base Product Number	SSM6G18

Attribute	Value
Datasheet	Toshiba Semiconductor and Storage SSM6G18NU,LF Datasheet