Images are for reference only

Toshiba Semiconductor and Storage RN1130MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part:
RN1130MFV,L3F
Datasheet:
Toshiba Semiconductor and Storage RN1130MFV,L3F Datasheet(PDF)

Out Sales

The inventory of this product may fluctuate too much; we need to confirm with our sales team.

Email: mia@vantcori.com

Bulk purchase inquiry

Request a quote
Attribute Value
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR);Cut Tape (CT);Custom-Reel
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN1130