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Goford Semiconductor 1002

N100V,RD(MAX)<250M@10V,RD(MAX)<2

Manufacturer:
Goford Semiconductor
Manufacturer Part:
1002
Datasheet:
Goford Semiconductor 1002 Datasheet(PDF)
In stock:
2880
Price:
$0.5

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Attribute Value
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR);Cut Tape (CT);Custom-Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 387 pF @ 10 V
Power Dissipation (Max) 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3