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Diodes Incorporated DMN2029UVT-7

MOSFET N-CH 6.8A TSOT26

Manufacturer:
Diodes Incorporated
Manufacturer Part:
DMN2029UVT-7
Datasheet:
Diodes Incorporated DMN2029UVT-7 Datasheet(PDF)

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Attribute Value
Mfr Diodes Incorporated
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSOT-26
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number DMN2029